inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor 2SC3582 description low noise figure, high gain , and high current capability achieve a very wide dynamic range and excellent linearity. low noise and high gain nf = 1.2 db typ. @f = 1.0 ghz ga = 12 db typ. @f = 1.0 ghz applications designed for use in low-noise and small signal amplifiers from vhf ~ uhf band. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 20 v v ceo collector-emitter voltage 10 v v ebo emitter-base voltage 1.5 v i c collector current-continuous 65 ma p c collector power dissipation @t c =25 0.6 w t j junction temperature 150 t stg storage temperature range -65~150
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor 2SC3582 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit i cbo collector cutoff current v cb = 10v; i e = 0 1.0 a i ebo emitter cutoff current v eb = 1v; i c = 0 1.0 a h fe dc current gain i c = 20ma ; v ce = 8v 50 250 f t current-gain?bandwidth product i c = 20ma ; v ce = 8v 8 ghz c re feed-back capacitance i e = 0 ; v cb = 10v;f= 1.0mhz 0.4 0.9 pf s 21e 2 insertion power gain i c = 20ma ; v ce = 8v;f= 1.0ghz 9 11 db mag maximum available gain i c = 20ma ; v ce = 8v;f= 1.0ghz 13 db nf noise figure i c = 7ma ; v ce = 8v;f= 1.0ghz 1.2 2.5 db ? h fe classification class k marking k h fe 50-250
inchange semiconductor isc rf product specification 3 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC3582
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 4 isc silicon npn rf transistor 2SC3582 s-parameter v ce = 8 v, i c = 5 ma, z o = 50 f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.668 -45.8 11.385 128. 9 0.049 83.5 0.833 -26.9 400 0.425 -61.5 7.014 103. 7 0.063 76.3 0.681 -31.1 600 0.294 -73.2 5.189 88. 6 0.088 68.5 0.620 -36.0 800 0.214 -79.4 3.967 75. 4 0.103 64.5 0.580 -40.8 1000 0.167 -79.5 3.485 64. 7 0.123 60.8 0.561 -46.3 1200 0.132 -79.8 2.831 57. 0 0.147 55.9 0.549 -53.4 1400 0.098 -75.2 2.604 48. 5 0.175 50.7 0.561 -60.3 1600 0.073 -72.0 2.182 39. 1 0.192 47.9 0.573 -69.1 1800 0.071 -63.7 2.135 31. 0 0.215 44.2 0.595 -71.8 2000 0.070 -60.6 1.879 21. 6 0.221 38.0 0.617 -78.0
inchange semiconductor isc rf product specification 5 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC3582 v ce = 8 v, i c = 20 ma, z o = 50 f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.333 -51.4 17.197 107. 7 0.053 97.5 0.638 -29.7 400 0.195 -49.2 8.729 89. 7 0.064 90.1 0.585 -31.8 600 0.158 -44.3 6.149 78. 8 0.078 80.3 0.573 -35.0 800 0.156 -41.0 4.603 68. 7 0.111 70.0 0.549 -38.2 1000 0.146 -35.8 3.997 60. 4 0.136 64.2 0.537 -42.4 1200 0.143 -30.7 3.205 54. 1 0.168 58.1 0.524 -57.1 1400 0.134 -25.8 2.939 46. 7 0.185 53.2 0.524 -55.4 1600 0.132 -22.3 2.463 38. 1 0.218 47.3 0.524 -62.0 1800 0.131 -20.0 2.396 30. 7 0.234 41.3 0.557 -68.5 2000 0.130 -17.8 2.107 22. 1 0.238 36.5 0.579 -74.8 s-parameter s 11e , s 22e -frequency condition v ce = 8 v 200mhz step
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 6 isc silicon npn rf transistor 2SC3582 s 21e -frequency condition v ce = 8 v s 12e -frequency condition v ce = 8 v
|
